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Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures
Abstract: In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure ...
It has long been known that the simple combination of a depletion-mode MOSFET (and before these were available, a JFET) and a resistor made a simple, serviceable current source such as that seen on ...
This is the material for an intermediate-level MOSFET circuit design course, held at JKU under course number 336.009 ("KV Analoge Schaltungstechnik"). Follow this link to access the material.
The rapid advancement of artificial intelligence (AI) and machine learning systems has increased the demand for new hardware components that could speed up data analysis while consuming less power. As ...
This novel approach does not require any change to the fundamental design, layout, or control circuitry of the SiC MOSFET. Many methods exist to improve the SCWT’s focus on reducing the FET saturation ...
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