Wolfspeed's Gen 5 SiC MOSFET technology delivers a breakthrough in specific on-resistance, achieving up to 27% efficiency improvement over currently available competitive 1200 V solutions Technology ...

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) opens a new chapter in power systems and energy conversion and introduces the next generation of silicon carbide (SiC) MOSFET trench technology. The ...

DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "GaN on Si HEMT vs SJ MOSFET: Technology and Cost comparison" report to their offering. The report proposes an in-depth ...

GENEVA, SWITZERLAND—A power MOSFET developed by STMicroelectronics takes advantage of the company’s ribbon-bonding technology. This delivers a low typical RDS(on) of 800 micro-ohms, which ST claims is ...

This powerful driver can source up to 2.5A with a 1.2 Ohm pull-down impedance for driving the top MOSFET and source 3A with a 0.55 Ohm pull-down impedance for the bottom MOSFET, making it ideal for ...

In a major industry breakthrough, Applied Novel Devices (AND) has introduced a new class of silicon power MOSFET technology. This ANDFET technology offers near-zero reverse-recovery losses, bringing ...

Infineon's MOSFET portfolio delivers efficient power conversion across automotive, industrial, and consumer applications. Explore how these semiconductor switches enable modern energy management.

Designed for highly efficient, low- R DS(ON) power MOSFETs, the V-Tr FET technology developed by SilTerra Malaysia Sdn Bhd and South Sea Semiconductor Ltd. features a narrow-trench gate electrode with ...

Transistors, which are devices that control or amplify electrical signals and power, are one of the most ubiquitous components of modern electronics. The most widely used transistor is known as the ...

In its ninth year, Design World’s LEAP Awards recognize the engineering innovations shaping the future of design and ...

Power MOSFETs are specialized metal oxide semiconductor field-effect transistors (MOSFET) designed to handle significant power levels. Although early power MOSFET manufacturing used several different ...