Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPM1R408RH,” an 80V N-channel power MOSFET ...

Given the maturity of MOSFETs, selecting one for your next design may seem deceptively simple. Engineers are familiar with the figures of merit on a MOSFET data sheet. Selecting a MOSFET requires the ...

Toshiba Electronics unveils new 80V N-channel power MOSFET designed to improve efficiency in industrial power systems.

International Rectifier announces an automotive DirectFET2 power MOSFET chipset optimized for dc-dc applications used in internal combustion engine (ICE) cars, hybrid, and electric vehicles.

Silicon has provided enormous benefits to the power electronics industry. But performance of silicon-based power electronics is nearing maximum capacity. Enter wide bandgap (WBG) semiconductors. Seen ...

Built using back-to-back SiC MOSFETs with an optically isolated gate driver, the relays offer compact packaging in a six-pin ...

This application note presents the MOSFET/IGBT drivers theory and its applications. The document describes an introduction of the MOSFET and IGBT technology, the types of drivers, isolation techniques ...

IGBT and Super Junction MOSFET Market · GlobeNewswire Inc. Dublin, Jan. 27, 2025 (GLOBE NEWSWIRE) -- The "IGBT and Super Junction MOSFET - Global Strategic Business Report" report has been added to ...

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...